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  ML7XX19 series type name ml720j19s,ml720k19s ml725b19f,ml725c19f mitsubishi laser diodes 1310nm ingaasp fp laser diodes description ML7XX19 are ingaasp laser diode which provides a stable, single transverse mode oscillation with emission wavelength of 1310nm and standard continuous light output power of 5mw. ML7XX19 are hermetically sealed devices having the photodiode for optical output monitoring. this high- performance, high reliability, and long-life laser diode is suitable for such applications as the light sources for optical communication systems up to 2.5gbps transmission applications. 1310nm, fabry-perot lds features electrical/optical characteristics application mitsubishi electric symbol parameter test conditions min. typ. max unit ith threshold current cw - 5 15 ma iop operation current cw,po=5mw[3mw] - 20 30 ma absolute maximum ratings mqw* active layer optical communication system * multiple quantum well v vop operating voltage cw,po=5mw[3mw] 1.1 1.5 l c center wavelength 1290 1310 1330 nm - l spectral width(rms , -20db) - 1.0 2.0 nm symbol parameter conditions ratings[note1] unit 20 ma tc case temperature - 40 ~ +85 tstg storage temperature - 40 ~ +100 c c i f forward current(pd) 2 v po light output power cw 10[7] mw cw,po=5mw[3mw] cw,po=5mw[3mw], rms high reliability, long operation life ( tc=25 c ) v rl reverse voltage(ld) 2 v - mw/ma h slope efficiency cw,po=5mw[3mw] 0.45[0.35] 0.3[0.2] - im monitoring current cw,po=5mw[3mw],vrd=1v 0.1 0.5 0.9 ma beam divergence angle (parallel) cw,po=5mw[3mw] 25[11] cw,po=5mw[3mw] 30[11] tr,tf rise and fall times ib=ith,po=5mw[3mw],20%-80% - 0.08 0.15 ns - q beam divergence angle (perpendicular) - - - q // - - - - v pd reverse voltage(pd) feb . 2002 wide tem. range operation ( tc= - 40 ~ + 85 c) have a lens-cap ( ml720k19s,ml725c19f) note 1 : [ ] applied to the lens cap type [ note 1 ]
outline drawings ml 7 20j 19 s pd (3) (2) (1) (4) case ld ml 7 20j 19 s pd (3) (4) (1) (2) case ld (3) (2) case ml 7 20k 19 s pd (4) (1) ml 7 25c 19 f pd (3) (2) (1) (4) case (1) 1.50.005 3.550.1 5.6 +0 -0.03 1.27 18 1 3.9 0.2 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (3.05) 0.03 (dimension:mm) ml7 2 0 k 19 s ml 7 25b 19 f ml 7 2 5 c 19 f ml 7 25 b 19 f ML7XX19 series mitsubishi laser diodes 1310 nm ingaasp fp laser diode (1) 1.0min. 2.0min. 3.550.1 5.6 +0 -0.03 1.27 0.250.03 (glass) 18 1 2.10.15 1.2 0.1 4- 0.450.05 (2) 10.1 2-90o 2.00.25 (p.c.d.) 4.25 (3) (4) (0.25) (0.25) reference plane emitting facet (1) (2) (dimension:mm) 0.03
0.0 0.2 0.4 0.6 0.8 1.0 1.2 -60 -40 -20 0 20 40 60 angle () relative light output q^ q// po=5mw tc=25c -80 -70 -60 -50 -40 -30 1295 1305 1315 1325 1335 1345 wavelength (nm) relative intensity (db) po=5mw, cw tc=25c 0 2 4 6 8 10 0 10 20 30 40 50 60 forward current if (ma) light output po (mw) 25c 50c 75c 85c ML7XX19 series mitsubishi laser diodes 1310 nm ingaasp fp laser diode typical characteristics fig. 1 light output v.s. forward current fig. 2 spectrum fig. 3 far field pattern


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